Abstract
ABSTRACTExperimental results obtained by rapid isothermal annealing of Si implanted semi-insulating GaAs are presented and compared with results obtained by electron-beam and conventional furnace annealing. We shall show that for high Cr-doped material the problem of redistribution cannot be avoided and that for undoped material, this technique yields very good activation (near 100%) and high mobility (approximately 4400 cm2 /V.sec).
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