Abstract

With the quick development of hydrogen energy, it is necessary to fabricate hydrogen sensor with high sensitivity, fast response/recovery and low detection limit to monitor the leakage of hydrogen. In this work, a series of indium tin oxide (ITOs) microspheres were successfully synthesized by alkoxide precursors method. Among them, 10.7% In-doped SnO2 (named ITO-II) based sensor exhibits high sensitivity, excellent selectivity, great stability and ultra-fast dynamic process (response time and recovery time<3 s), at a low working temperature of 200 °C. The excellent hydrogen sensing performance of ITO-II should be attributed to the increased chemisorbed oxygen and the high intrinsic reactivity of SnO2 toward hydrogen. This work provides inspiration for the design of novel hydrogen sensing material.

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