Abstract
In this contribution, electric field has some effects to increase growth for specific time duration on zinc oxide (ZnO) nanobars. First, the zinc (Zn) thin film has been prepared by 235,000 V/m electric field assisted physical vapor deposition (PVD) at vacuum of 1.33 × 10−5 mbar. Second, strong electric field of 134,000 V/m has been used in ambient for growing ZnO nanobars in term of the time include 2.5 and 10 h. The performances of the ZnO nanostructure in absence and presence of electric field have been determined by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results of XRD analysis showed that ZnO has a hexagonal bars structure and a strongly preferred (101) orientation which is strongest than without applying electric field. SEM analysis revealed that physical vapored ZnO thin film in presence of electric field are densely packed with uniform morphological, thinner and denser in distribution. Electric field effect for ZnO growth in 2.5 h is better than it in the 2.5 h without electric field but by passing the time the media influence has good power almost as same as electric field. Through this electric field in PVD, the compact and uniform Zn film has been achieved which is less diameter than ordinary PVD method. Finally, we carry out a series of experiments to grow different-orientation ZnO nanobars with less than 100 nm in diameter, which are the time saving process in base of PVD ever reported. Therefore, the significant conclusion in usage electric field is reducing time of growth.
Highlights
Introduction and theoretical frame workzinc oxide (ZnO) is a II–VI semiconductor compound that has been studied due to its wide range of applications in nanosystems
Numerous groups have modeled deposition processes of thin films [6], but here we looked at ZnO and investigated, at the nanoscale level, the effect of strong electric field on Zn condensation on substrate and using normal electric field on the growth of ZnO in two different time (2.5 and 10 h) of experiment
Zn granul had deposited on the lam which had been placed at the bottom of Substrate holder to produce only Zn nona sheet, in another hand producing ZnO nano structure refer to the step
Summary
ZnO is a II–VI semiconductor compound that has been studied due to its wide range of applications in nanosystems. Most of this group semiconductors crystallize in either cubic zinc blende or hexagonal wurtzite structure where each anion is surrounded by four cations at the corners of a tetrahedron, and vice versa [1].The morphology of nanostructures is determined by the combination of kinetic effects, the growth rates of different surfaces, thermodynamic effects and the energetic stability of the overall nanostructure [2, 3]. We focused on the difference between growth produced by electric field and without it
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