Abstract
This paper aims to fabricate longer Al whiskers with shorter heating time by using stress-induced migration. The island structure sample, which consists of a rectangular Al thin film on a Si wafer covered with a TiN layer, is heated for rapid growth of Al whiskers. Unique, compressive stress distribution in the Al thin film from the center to the edge of islands during the heating contributes to whisker growth. Si diffusion into the Al thin film during heating promotes atomic diffusion. In order to obtain longer whiskers, a lower heating temperature of 300 °C was found to be better than 500 °C. As a result, a longer Al whisker of approximately 0.5 mm was obtained for 3 h heating time.
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