Abstract
As a promising high-temperature ceramic, aluminum silicon carbide (Al4SiC4) has attracted much attention. Al4SiC4 is usually synthesized at high temperatures with a long reaction time in an electric furnace. Self-propagating high-temperature synthesis (SHS) is a promising technique for rapid synthesis. In this study, Al4SiC4 was prepared by the SHS method from a mixture of silicon, aluminum and carbon black with the addition of poly(tetrafluoroethylene) (PTFE) as an exothermic promoter. The experimental results showed that the use of a high-pressure Ar atmosphere could retain the gaseous materials in the pellet mixture, and the PTFE additive promoted the formation of silicon carbide. In addition, the oxide layer present on the surface of silicon particles inhibited the reaction between silicon and carbon. As a result, high-purity Al4SiC4 could be synthesized from aluminum, silicon, and carbon black with 15 wt% PTFE under 1.0 MPa Ar atmosphere in several seconds by the SHS method.
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