Abstract
The rapid crystallization of amorphous silicon utilizing the radio-frequency (rf) inductive coupling thermal plasma torch of argon is demonstrated. Highly-crystallized Si films were fabricated on thermally grown (th-)SiO2 and textured a-Si:H:B/SnO2/glass by adjusting a distance between the tip of the silica tube and the substrate stage and the translational velocity of the substrate stage. The crystallization was promoted efficiently from the bottom to front surface during the solidification and crystallization of liquid Si.
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