Range distributions of MeV implants in silicon II: A comparison of SIMS and spreading resistance profiles of B, P and Ga

Abstract

In an earlier paper [1] range moments were presented for B, P, As and Sn implants into silicon in the energy range 0.4–6 MeV. These moments were obtained using spreading resistance profilometry (SRP) after the samples had been annealed to activate the implants. The mean of the distributions agreed moderately well with theory but the straggle was significantly greater. In this paper we present SIMS data from the as-implanted and annealed samples from the earlier study as well as SRP and SIMS data on Ga implants in silicon. The larger straggle in the annealed samples seen with SRP is also seen in the SIMS data from the annealed samples but not in the as-implanted samples. In addition, distortion of some of the profiles is evident which is probably due to channeling. In the gallium profiles particularly there is broadening of the profile on the bulk side of the implant as if diffusion in undamaged material is easier than in damaged material. This effect is only visible in annealed samples.