Range and shape factors, damage, regrowth, and redistribution for Ag implants in (100) and (111) Si

Abstract

The nature of regrowth of implantation-damaged (100) and (111) Si was investigated by measuring the depth distribution of implanted Ag atoms following annealing at 550 °C for fluences of 1×1012 to 1×1015 cm−2. Cross-section transmission electron microscope measurements were made for a few conditions to compare damage depth distributions. Other factors studied were anneal time, Si growth technique, Ag atom densities, and the transition region between amorphous and crystalline Si. Ranges and profile shape factors are reported for 150, 300, 450, and 600 keV Ag implants into Si.