Range and range straggling of 15 to 350 keV 69Ga in amorphous silicon

M Behar,F C Zawislak,C A Olivieri,B K Patnaik,C V De B Leite Filho,P F P Fichtner,J P De Souza,J P Biersack,D Fink

doi:10.1080/01422448408210073

Range and range straggling of 15 to 350 keV 69Ga in amorphous silicon

M Behar, F C Zawislak + Show 7 more

https://doi.org/10.1080/01422448408210073

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Journal: Radiation Effects	Publication Date: Jan 1, 1984
Citations: 8

Affiliation: Universidade Federal do Rio Grande do Sul, Pontifical Catholic University of Rio de Janeiro, Max Planck Institute for Chemistry

#Amorphized Silicon #Range Straggling + Show 8 more

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Abstract

Abstract Depth distribution profiles of 15 to 350 keV 69Ga+ implanted at room temperature in amorphized silicon have been measured by 4He ion Rutherford backscattering. The measured projected ranges and range stragglings are in excellent agreement with the predictions calculated via realistic Monte Carlo simulations, TRIM code.

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