Abstract
In this work, we report the deposition of graphene flakes exfoliated through graphite dispersion in N-methyl-pyrrolidone using non-vacuum electrohydrodynamic atomization (EHDA) technique. Stable cone jet mode of EHDA is used to deposit graphene flakes on silicon substrate. The deposited graphene flakes film is characterized by Raman spectroscopy, microscopy, 3D-Nanomap, scanning electron microscope, and UV–visible spectroscopy. Through characterizations it is evident that a randomly oriented graphene flakes film has shown good transparency, conductivity and suitable work function. For electrical characterization of film, it is employed as cathode in a simple diode indium tin oxide/(poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)/polydioctylfluorene-benzothiadiazole/graphene. It is observed that at voltage of 0.3 V, the current density in device is at low value of 2.67 A/cm2 however as the voltage is increased to a value of 4 V the current density is increased by almost 100 times and reaches up to 2.65 × 102 A/cm2. We believe that by further optimizing parameters of EHDA techniques for graphene deposition, more uniform and defect free graphene film can be obtained.
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