Abstract

Abstract The Random Walk on Spheres (RWS) algorithm for solving anisotropic transient diffusion problems based on a stochastic learning procedure for calculation of the exit position of the anisotropic diffusion process on a sphere is developed. Direct generalization of the Random Walk on Spheres method to anisotropic diffusion equations is not possible, therefore, we have numerically calculated the probability density for the exit position on a sphere. The first passage time is then represented explicitly. The method can easily be implemented to solve diffusion problems with spatially varying diffusion coefficients for complicated three-dimensional domains. Particle tracking algorithm is highly efficient for calculation of fluxes to boundaries. We apply the developed algorithm for solving an exciton transport in a semiconductor material with a threading dislocation where the measured functions are the exciton fluxes to the semiconductor’s substrate and on the dislocation surface.

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