Abstract
AbstractWe suggest a random walk on spheres based stochastic simulation algorithm for solving drift-diffusion-reaction problems with anisotropic diffusion. The diffusion coefficients and the velocity vector vary in space, and the size of the walking spheres is adapted to the local variation of these functions. The method is mesh free and extremely efficient for calculation of fluxes to boundaries and the concentration of the absorbed particles inside the domain. Applications to cathodoluminescence (CL) and electron beam induced current (EBIC) methods for the analysis of dislocations and other defects in semiconductors are discussed.
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