Abstract
The filamentary growth and switching mechanism of SiOx-based resistive switching random access memories have been investigated. In test structures with two devices connected in series, it has been found that the applied voltage in the first electroforming sweep equally stressed the SiOx in both devices. Therefore, it is concluded that a conducting filament (CF) grows in both devices. The resistance switching is induced by the rupture and recovery in a weak spot of the CF. The weak spot formation is a random process in the CF and could be anywhere along the CF. Once the weak spot is established, the rupture and recovery is localized in that particular region and independent of applied voltage polarity.
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