Random Number Generation Based on Ferroelectric Switching

Abstract

Hafnium oxide-based ferroelectric field-effect transistors (FeFETs) have a great potential for fast nonvolatile memory due to their high performance, fully CMOS compatible integration, and low-power operation. The aggressive scaling of these devices has revealed novel features, such as the multilevel storage capability and abrupt switching, which, however, appears to be a stochastic process. In this letter, we propose a path for true random number generation based on the statistical switching in a single FeFET device. It relies on an inherent randomness of the polarization reversal of ferroelectric domains in the gate stack. The bit sequence is generated by repeatedly programming an FeFET at a calibrated voltage and pulse width, and features random and equiprobable “ones” and “zeros,” which are separated by orders of magnitude in drain current. This simple yet reliable operation provides a compact one-transistor solution for the unbiased random number generation.