Random lasing in disordered semiconductor medium with four-level two-electron atomic system

Abstract

A four-level two-electron model, in which transitions between the energy levels are governed by coupled rate equations and the Pauli Exclusion Principle (PEP), is used in FDTD method for simulation random lasing of disordered semiconductor gain medium. For comparison, the gain threshold behavior of optically pumped random lasing is investigated in three atomic systems: a four-level two-electron atomic system with PEP, a four-level two-electron atomic system without PEP and a four-level one-electron atomic system without PEP. Computed results show that the first excited mode with PEP is different from that without PEP. Further analysis demonstrates that thresholds in four-level two-electron atomic system with PEP are higher than that without PEP about an order of magnitude.