Abstract

Impurity diffusion in the $\ensuremath{\delta}$ layer during the process of its growth has been considered. Experiments show that the spreading of the impurity profile has a complex dependence on the in-plane impurity concentration. We carried out the numerical simulation of the self-consistent diffusion problem for the impurities moving in their own random electric field and have shown that at some critical impurity concentration in $\ensuremath{\delta}$ layer the impurity distribution function perpendicular to the layer acquires a non-Gaussian character.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call