Random dopant induced threshold voltage variation analysis of asymmetric spacer FinFETs

Abstract

In this paper, we investigate the effect of random dopant fluctuations (RDF) induced V t variation on drain side asymmetric dual-k spacer (ADKS) Germanium FinFET with Si 3 N 4 as outer low-k material and TiO 2 as inner high-k material. By using statistical simulations, we compared ADKS Ge FinFET with ADKS Si FinFET and conventional FinFET and observed that ADKS Ge FinFET and ADKS Si FinFET reduces RDF based V t variability by 10.7 % and 21.73 % respectively. ADKS architecture also shows smaller sub threshold swing (SS), lower short channel effects (SCEs) and higher I on /I off ratio as compared to conventional FinFET.