Abstract
In this work we study numerically the effects of the angle of deposition of particles in the growth process of a thin-film generated by aggregation of particles added at random. The particles are aggregated in a random position of an initially flat surface and with a given angle distribution. This process gives rise to a rough interface after some time of deposition. We performed Monte Carlo simulations and, by changing the angle of deposition, we observed different results from the random deposition (RD) model. We measured the usual scaling exponents, namely, the roughness () and the growth () exponents. Our results show that the particles added non-perpendicularly to the substrate, can change the behavior in a discrete atomistic random deposition model. When particles are deposited with an angle of 45° in relation to the surface, the values of and are observed in the Random Deposition model. We also propose an analytic approach, using a differential stochastic equation to analyze the growth process evolution, and our theoretical results corroborate the computer simulations.
Highlights
The understanding of physical process that take place at surfaces and interfaces has attracted interest of researchers from different fields [1, 2]
Theoretical and computational models represent a powerful tool to study the growth of thin-films and interfaces, where the physicists can apply the well-known methods of statistical physics to describe these non-equilibrium phenomena
In this paper we introduce a modification in the Random Deposition (RD) model [1, 2, 16], considering that the particles can be aggregated with different angles in relation to the initially flat substrate
Summary
The understanding of physical process that take place at surfaces and interfaces has attracted interest of researchers from different fields [1, 2]. Motivated by the technological applications developed from thin-films [3, 4], the investigation on the formation of structures due to the deposition of atoms or particles has been the subject of large number of recent studies both experimental and theoretical [5,6,7,8]. Theoretical and computational models represent a powerful tool to study the growth of thin-films and interfaces, where the physicists can apply the well-known methods of statistical physics to describe these non-equilibrium phenomena. Atomistic models have been largely applied in this field of study, using different forms of particles [5, 10, 11]. Many models are quite simpler, one can use them as a good starting point to study more sophisticated processes that are directly related to the experimental growth process and techniques
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