Random and self-aligned growth of 3C-SiC nanorods via VLS–VS mechanism on the same silicon substrate

Abstract

In this study, a novel chemical vapor deposition (CVD) method for the mixed growth of random and self-aligned cubic (3C)-silicon carbide (SiC) nanorods was demonstrated in which the growth took place simultaneously via the VLS and VS mechanisms on the same Si substrate. The growth was carried out in an inductively heated horizontal cold-wall atmospheric pressure chemical vapor deposition (APCVD) reactor at 1200°C for 1h using a single source precursor i.e., hexamethyldisilane (HMDS) for both silicon and carbon and nickel (Ni) was used as a catalyst for the growth of 3C-SiC nanorods on the surface of Si (111) substrate via VLS mechanism while the self-aligned growth via VS mechanism was observed only at the cross-section of the same Si substrate facing the gas inlet end.