Abstract
Abstract Some years ago the Transmission Electron Microscopy of High Resolution Replica (TEMHRR) has been successfully used to show the damage created in Si single crystals by channeled In ions [1]. In the present paper the capacity of the same technique to reproduce the full in-depth damage distribution in 1014 Zn+ /cm2 implanted GaAs is shown. The used replica technique allows us to distinguish three zones in the damaged layer: starting from the implanted surface, the first one connected with the random damage; the second formed by channeled-ion traces; the third showing a damage peak due to the stop of the channeled ions. Comparing the obtained values of the random damaged layer thickness with those already reported in the literature, we found a good agreement.
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