Abstract
The main objective of this discussion is to examine the interaction between the magnetic field and the excited semiconductor medium during the microtemperature process. The photothermal theory is used to obtain the main variables based on the generalized thermoelasticity theory of a rotator medium. The elastic-plasma-thermal transport processes in two-dimensions (2D) have been constructed. Moreover, the Fourier and Laplace integral transformations are used for the main governing equations under the influence of microtemperature vector field. The analytical solutions of the basic physical field quantities are obtained in the physical domain. The ramp type heating and some other mechanical-thermal-elastic-plasma conditions are applied on the free surface of the medium to determine the unknown parameters. To obtain the complete solutions of the main physical field quantities, the numerical inversion techniques of Fourier and Laplace transformations are used in space–time physical domain. Some comparisons are carried out for some several parameters graphically and discussed.
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