Abstract
Ramp type Josephson junctions have been fabricated using DyBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// as electrode material and PrBa/sub 2/Cu/sub 3-x/Ga/sub x/O/sub 7-/spl delta// with x=0, 0.10 and 0.40 as junction barriers. Barrier thickness lie between 6-30 nm. Several junctions without barrier were made in order to find ways to minimize the damage of the ramp interface. In total about 40 chips were fabricated each containing several junctions and their I-V characteristics measured for various temperatures down to 4.2 K. Only those junctions showing clear RSJ-like curves were selected to be analyzed. In some cases we also measured I/sub c/ as a function of a small applied field and obtained a clear Fraunhofer pattern, but there is a tendency to flux trapping as evidenced by LTSEM. It was found at 4.2 K that the critical current density J/sub c/ scales with the specific resistance R/sub n/A as J/sub c/=C/sub bar/(R/sub n/A)/sup -m/ (m=1.8/spl plusmn/0.5). The barrier material dependent constant C/sub bar/ increases with x, whereas, for a given d, J/sub c/ is constant and R/sub n/A increases.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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