Abstract
The present investigation is concerned with study the two-dimensional deformation in a semi-infinite semiconducting medium subjected to ramp type heating. The deformation in the medium is caused subjected to a thermal source of ramp-type nature applied along the free surface of a semiconducting medium. The semiconductor thermoelastic medium is under the influence of an internal heat source of constant magnitude. Integral Transform method has been used to obtain the transformed expression of displacement components, stress components, temperature distribution, and carrier density. The transformed expressions are then inverted using numerical inversion technique. The effect of ramp-type source and thermoelectric coupling parameter on the components of displacement, force stress, temperature distribution, and carrier density has been shown graphically.
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