Abstract
Recently, tin disulfide (SnS2) has become a hot research focus in various fields due to its advantages of a high transistor switching ratio, an adjustable band gap in visible light range, excellent Li storage performance, sensitive gas recognition, and efficient photocatalytic capability. However, at present, studies of its basic structure mostly stay on the regulation related to the number of layers. To maximize the value of SnS2 in the application design, this paper analyzes the angle-resolved polarized Raman spectra of SnS2 crystals grown under high-temperature sealing systems. Under the parallel scattering configuration test of both the sample basal plane and the cross plane, we observed that how the Raman scattering intensity of the two test planes varies with the polarization angle is different. Combining this experimental result with theory support allows us to reach a conclusion that the differential polarizability of the phonon vibration mode along the z-axis of the cross plane of SnS2 is proven to be the strongest. This finding is expected to provide favorable support for the application of structural regulation of SnS2 and work as a reference for studying other van der Waals layered materials with greater potential.
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