Abstract
We report polarized Raman scattering studies on single InAs nanowires (NWs). The NWs were grown by metalorganic chemical vapor deposition on Si (111) substrates without external catalyst and showed a zinc-blende crystal structure. The single NWs were studied for different polarization excitation of the incident laser beam relative to the NW axis. The transverse optical (TO) mode exhibits maximum intensity when both the incident and analyzed light polarizations are parallel to the NW axis. The TO mode of InAs NWs is found to act like a nearly perfect dipole antenna, which can be attributed to the one-dimensional NW geometry and Raman selection rules.
Highlights
Semiconductor nanowires (NWs) have been intensively studied in the last decade due to their novel physical properties and potential applications in high-performance devices, such as field-effect transistors, lasers, photodetectors, and photovoltaic devices [1,2,3,4,5]
The epitaxial relationship between the InAs NWs and Si (111) substrate and the predominant crystal structure of these NWs were analyzed by X-ray diffraction (XRD) and transmission electron microscopy (TEM) (Figure 3)
The highresolution TEM (HRTEM) image combined with the fast Fourier transform (FFT) image indicates that the InAs NW has a cubic, zinc-blende structure and grows along the direction normal to the Si (111) substrate
Summary
Semiconductor nanowires (NWs) have been intensively studied in the last decade due to their novel physical properties and potential applications in high-performance devices, such as field-effect transistors, lasers, photodetectors, and photovoltaic devices [1,2,3,4,5]. InAs NWs possess excellent electron transport properties such as high bulk mobility, small effective mass, and low ohmic contact resistivity, which can be used for making highperformance electronic devices such as high-mobility transistors [6,7,8]. For their device applications, it is important to understand the physical properties of these InAs NWs, including phonon scattering information. Combined with advanced confocal microscopy, Raman scattering can be well used to investigate the phonon properties of single NWs with a spatial resolution of roughly half the excitation wavelength.
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