Abstract
We have applied the Raman spectroscopy technique to thestudy of phonon-plasmon coupled modes in Si-dopedGaAsn/AlAsm superlattices (SLs), grown on (001), (311)A and(311)B substrates. We have observed the shift and broadening of theRaman peaks in doped SLs, compared with undoped SLs. When the GaAslayers were thinned from 10 to 1 monolayer, the coupledphonon-plasmon modes became three-dimensional-like, and theinteraction of plasmons with LO-phonons of AlAs-type took place. Thephonon-plasmon interaction of the SLs was numerically simulated.There was a qualitative agreement between the experiment and thecalculations. We observed a difference in dispersion between thecoupled phonon-plasmon modes for SLs grown on facet surface (311)Aand surface (311)B. This is probably due to differences in theelectron spectra of such SLs caused by the difference in shape ofGaAs quantum objects formed on AlAs reconstructed surfaces.
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