Abstract
Dynamic behavior of the abrupt crystalline-to-amorphous (c-a) transition in the ion-implantation process and the amorphous-to-crystalline (a-c) transition in Q-switched neodymiun-doped yttrium aluminum garnet laser annealing are studied by use of light scattering. Excess internal energy and excess configurational entropy required for the abrupt c-a transition are invoked to calculate the threshold fluence of implanted species. It is observed that the threshold power density of pulse-laser annealing for recrystallization depends strongly upon the coupling of light to a given thickness of implanted silicon.
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