Abstract
Cadmium telluride thin films on transparent conducting oxide (TCO) substrate have been deposited galvanostatically from 1-butyl-3-methylimidazolium chloride at 80 °C. The effect of applied current density on surface morphology and elemental composition of as-deposited films has been presented. SEM micrographs show inter-connected needle-like morphology for CdTe thin films. EDX reveals formation of stoichiometric CdTe films at an estimated optimal current density of 745 μA/cm2. Cubic zinc blend CdTe films were obtained with Te-rich or Cd-rich content with variation of applied current densities. The optical band gap of 1.49 eV were observed in the case of stoichiometric CdTe film having large crystallite sizes. The micro-Raman analysis of CdTe films showed a resonant peak at 164 cm-1 which validated the formation of pure CdTe phase. A shift in the peak and an increase in the Huang-Rhys factor (I2LO/I1LO) can be associated with impurities/defects caused by excess of Cd or Te content in the CdTe matrix.
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