Abstract
Raman spectroscopy powered by theoretical modeling of vibrational modes was shown to be an effective tool to examine interface structure of superlattices (SLs). In this work we studied GaAsn/AlAsm (n=1–10 monolayers) corrugated superlattices (CSLs) grown on (311)A GaAs substrates using Raman spectroscopy and high-resolution transmission electron microscopy. The strongest modification of the calculated Raman spectra is found for the finite length of the GaAs-domain in the CSL in the case of partial (<1nm) GaAs filling of the AlAs surface. This theoretical result is in a very good agreement with the sharp transformation of the experimental Raman spectra observed for this thickness range. Thus, calculated and experimental Raman spectra demonstrated a good agreement for both complete (≥1nm) and partial (<1nm) GaAs filling of the AlAs surface.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
