Abstract
ABSTRACTThe “bulk” and near-surface regions of N implanted heteroepitaxial ZnSe films were studied using the full width at half maximum (FWHM) of the LO phonon Raman line. The “bulk” FWHM has a minimum below an annealing temperature Ta = 400°C, and increases for higher Ta. This is attributed to the relaxation of residual stress, and to an increased stress from the formation of Zn vacancies. The surface FWHM has a deep minimum near Ta = 500°C which is attributed to the relaxation of the implantation damage at lower Ta, and stress induced by Zn vacancy formation at higher Ta. Another wider peak is found just after implantation and for Ta = 600°C, and results from a sum of two peaks attributed to the heavily damaged region around Rp and to the region with Zn vacancies.
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