Abstract
Electrochemical treatment of crystalline GaAs in 1 M HCl results in the formationof porous GaAs. As a by-product of the electrochemical dissolution process,small transparent crystals may grow on the porous GaAs skeleton under certainchemical conditions. These surface crystalline deposits have been investigatedby Raman scattering spectroscopy. From surface chemical analysis and byreference to the Raman spectra of appropriate chemical compounds, it was determinedthat the crystallites comprise As2O3 and Ga2O3.Their Raman spectra and that of As2O5 · xH2Oare presented here for the first time in detail.
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