Raman spectroscopy of few-layer graphene prepared by C2–C6 cluster ion implantation

Abstract

Few-layer graphene has been prepared on 300nm-thick Ni films by C2–C6 cluster ion implantation at 20keV/cluster. Raman spectroscopy reveals significant influence of the number of atoms in the cluster, the implantation dose, and thermal treatment on the structure of the graphene layers. In particular, the graphene samples exhibit a sharp G peak at 1584cm−1 and 2D peaks at 2711–2717cm−1. The IG/I2D ratios higher than 1.70 and IG/ID ratio as high as 1.95 confirm that graphene sheets with low density of defects have been synthesized with much improved quality by ion implantation with larger clusters of C4–C6.