Abstract
SiSi 1−xGe x (x=0.2∼0.3) quantum dots of 50∼60nm in diameter fabricated by using electron beam lithography and reactive ion etching were characterized by Raman spectroscopy. Clear evidence of process-induced strain relief was found in addition to the observation of features from enhanced multi-phonons and SiSi 1−xGe x intermixing arising from the process-induced crystal symmetry breakdown in the nanostructured quantum dots.
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