Year-end Sale % OFF 
Abstract
Metal organic vapor deposition (MOCVD) is a well known method for preparing high quality and large area CuIn 1 − x Ga xSe 2 (CIGS) absorber layers. Some in-situ non-contact monitoring systems are needed when CIGS absorber layers are manufactured in industry. In this study, CuInSe 2 (CIS) and CIGS thin films with different composition ratios, [Cu]/[In + Ga], were prepared by MOCVD using [Me 2In(μ-SeMe)] 2, hexafluoroacetylacetonate Cu(I) (3,3-dimethyl-1-butene), trimethyl gallium and dimethyle diselenide as the In–Se single source, Cu, Ga and Se precursors, respectively. The Raman shift spectra of the films with various composition ratios were analyzed to produce a basic algorithm that can determine the composition ratios of CIS and CIGS thin films indirectly.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
