Abstract
AbstractThe deposition of micro‐ and nanocrystalline bismuth telluride thin films with tailored structure and composition is of interest in view of improving the well‐known material thermoelectric properties. Only a few works exist that discuss Raman scattering of Bi2Te3 crystals and films, while a Raman characterization of other phases, i.e. other lesser known compounds of the Bi‐Te system, such as tsumoite (BiTe) and pilsenite (Bi4Te3), is still completely lacking. We here present a Raman investigation of Bi‐Te polycrystalline thin films with controlled structure (stoichiometry and growth orientation), morphology and phase composition, produced by nanosecond pulsed laser deposition. Interpretation of Raman spectra from Bi‐Te films was supported by scanning electron microscopy, energy dispersive spectroscopy (EDS) and X‐Ray diffraction measurements, together with the predictions of the group theory. In this way, the first Raman characterization of Bi‐rich phases (namely BiTe and Bi4Te3) has been obtained. For Bi‐Te compositions characterized by a high Bi or Te content, Raman spectra reveal that segregation of elemental Bi or Te occurs. Copyright © 2008 John Wiley & Sons, Ltd.
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