Raman Spectroscopy Investigation of Graphene Oxide Reduction by Laser Scribing

Giuseppe Compagnini,Vittorio Scardaci

doi:10.3390/c7020048

Abstract

Laser scribing has been proposed as a fast and easy tool to reduce graphene oxide (GO) for a wide range of applications. Here, we investigate laser reduction of GO under a range of processing and material parameters, such as laser scan speed, number of laser passes, and material coverage. We use Raman spectroscopy for the characterization of the obtained materials. We demonstrate that laser scan speed is the most influential parameter, as a slower scan speed yields poor GO reduction. The number of laser passes is influential where the material coverage is higher, producing a significant improvement of GO reduction on a second pass. Material coverage is the least influential parameter, as it affects GO reduction only under restricted conditions.

Highlights

Laser scribing has arisen over the past decade as an easy, efficient and low-cost method for the modification of materials, which can be mask-less patterned without the use of expensive lithographic techniques that require a clean room environment [1,2].Processing graphene in liquid media is a challenge that has been solved over the years via different approaches
Graphene oxide (GO) properties are deeply different from pristine graphene, so it has to be reduced back after processing to obtain a new material known as reduced GO (RGO) that resembles graphene [5,6,7]
In our previous work [17], we demonstrated that the scribing environment is a key factor in achieving high-quality RGO and that Argon-based atmospheres yield the best outcome in terms of similarity of RGO to pristine graphene

Summary

Introduction

Laser scribing has arisen over the past decade as an easy, efficient and low-cost method for the modification of materials, which can be mask-less patterned without the use of expensive lithographic techniques that require a clean room environment [1,2]. While GO reduction is typically carried out chemically, laser scribing of GO has been proposed as a faster, easier, and chemical-free alternative, able to produce conductive patterns with a resolution down to 1 μm with no need of expensive lithography and cleanroom technology. In this process, the laser energy transferred onto GO induces the material to release CO2 and H2 O, partially recreating the graphene structure [1,8]. C 2021, 7, 48 the amount of material and number of scribing passes are only influential under certain conditions

Materials and Methods

Results

Conclusions