Abstract
Raman scattering from both longitudinal optical phonons and interface modes has been used to study the chemical bonding across the InAs/AlSb interface in GaSb capped InAs/AlSb quantum wells grown by solid-source molecular-beam epitaxy. The effusion cell shutter sequence for the growth of the interfaces was selected for the deposition of either 1 monolayer (ML) of InSb or g to 3 MLs of AlAs. The latter growth sequence should in principle strongly favour the formation of AlAs-like interfaces. In all cases an InSb-like interface mode is observed, indicating the preferential formation of In-Sb bonds irrespective of the shutter sequence. This behaviour is in contrast to that found for InAs/GaSb heterostructures where both types of interface bonds, InSb-like and GaAs-like, were observed according to the shutter sequence. The deposition of 2 or 3 MLs of AlAs at the InAs/AlSb interface results in the formation of pseudo-ternary AlSb 1-xAs x barriers rather than binary AlAs interfaces and AlSb barriers, indicating a strong exchange among the group V atoms. PACS: 6g.35.Ja, 68.55.Bd, 78.30.Fs
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