Raman Spectroscopic Study of As-Deposited and Exfoliated Defected Graphene Grown on (001) Si Substrates by CVD

Abstract

We present here results on a Raman spectroscopic study of the deposited defected graphene on Si substrates by chemical vapor deposition (thermal decomposition of acetone). The graphene films are not deposited on the (001) Si substrate directly but on two types of interlayers of mixed phases unintentionally deposited on the substrates: а diamond-like carbon (designated here as DLC) and amorphous carbon (designated here as αC) are dominated ones. The performed thorough Raman spectroscopic study of as-deposited as well as exfoliated specimens by two different techniques using different excitation wavelengths (488, 514, and 613 nm) as well as polarized Raman spectroscopy establishes that the composition of the designated DLC layers varies with depth: the initial layers on the Si substrate consist of DLC, nanodiamond species, and C70 fullerenes while the upper ones are dominated by DLC with an occasional presence of C70 fullerenes. The αC interlayer is dominated by turbostratic graphite and contains a larger quantity of C70 than the DLC-designated interlayers. The results of polarized and unpolarized Raman spectroscopic studies of as-grown and exfoliated graphene films tend to assume that single- to three-layered defected graphene is deposited on the interlayers. It can be concluded that the observed slight upshift of the 2D band as well as the broadening of 2D band should be related to the strain and doping.