Abstract
Lattice vibration behaviors of defect stannite phases in the Cu-(In,Ga)-Se system are studied by the Raman spectrometry and the dispersion curve calculation in comparison with the chalcopyrite phases in this system. Bulk crystals in the alloy systems of Cu(In1-xGax)3Se5 and Cu2(In1-xGax)4Se7 are prepared by the normal freezing method. The characteristic two Raman peaks at 160 and 175 cm-1 for these crystals, apparently unrelated to the indium to gallium ratio, are assigned as two Γ1 modes of D2d symmetry. This can be explained from the dispersion curve calculation assuming the vacancies at 2a or 2b site of the defect stannite structure through the Cu-(In,Ga)-Se system.
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