Raman scattering study on vibrational modes in Ga 1−xMn xN prepared by Mn-ion implantation

Abstract

Raman scattering measurements have been carried out on ferromagnetic semiconductor Ga 1− x Mn x N prepared by Mn-ion implantation and post annealing. The Raman results obtained from the annealed and un-annealed Ga 1− x Mn x N demonstrate that crystalline quality has been improved in Ga 1− x Mn x N after annealing. Some new vibrational modes in addition to GaN-like modes are found in the Raman spectra measured from the Ga 1− x Mn x N where the GaN-like modes are found to be shifted in the higher frequency side than those measured from the bulk GaN. A new vibrational mode observed is assigned to MnN-like mode. Other new phonon modes observed are assigned to disorder-activated modes and Mn-related vibrational modes caused by Mn-ion implantation and post-annealing.