Raman Scattering Study on the Influence of E-Beam Bombardment on Si Electron Lens.

Dong-Hyun Baek,Jung-Gon Kim,Young-Bok Lee,Geon-Woo Lee,Ho-Seob Kim

doi:10.3390/molecules26092766

Dong-Hyun Baek, Jung-Gon Kim + Show 3 more

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https://doi.org/10.3390/molecules26092766

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Abstract

Microcolumns have a stacked structure composed of an electron emitter, electron lens (source lens), einzel lens, and a deflector manufactured using a micro electro-mechanical system process. The electrons emitted from the tungsten field emitter mostly pass through the aperture holes. However, other electrons fail to pass through because of collisions around the aperture hole. We used Raman scattering measurements and X-ray photoelectron spectroscopy analyses to investigate the influence of electron beam bombardment on a Si electron lens irradiated by acceleration voltages of 0, 20, and 30 keV. We confirmed that the crystallinity was degraded, and carbon-related contamination was detected at the surface and edge of the aperture hole of the Si electron lens after electron bombardment for 24 h. Carbon-related contamination on the surface of the Si electron lens was verified by analyzing the Raman spectra of the carbon-deposited Si substrate using DC sputtering and a carbon rod sample. We report the crystallinity and the origin of the carbon-related contamination of electron Si lenses after electron beam bombardment by non-destructive Raman scattering and XPS analysis methods.

Highlights

Microcolumns, which are stacked structures containing an electron emission source, an electron lens, and a deflector, have many advantages owing to their size (1/100) compared to existing electron columns [1,2,3]
Carbon is simultaneously deposited around the aperture hole to generate contamination, which occurs when the source generated during sample measurement in scanning electron microscope (SEM) analysis is deposited onto the sample surface
After the electron beam was irradiated with an acceleration voltage of 0 eV, 20 keV, and 30 keV around the aperture hole of the etched Si electron lens sample for 24 h, the surface of the silicon near the aperture hole was irradiated using Raman scattering

Summary

Introduction

Microcolumns, which are stacked structures containing an electron emission source, an electron lens (source lens and einzel lens), and a deflector, have many advantages owing to their size (1/100) compared to existing electron columns [1,2,3]. Accelerated electrons, through the electron emission source, pass through the aperture hole of the first electrode, which is the extractor, thereby causing collisions around the aperture hole. Carbon is simultaneously deposited around the aperture hole to generate contamination, which occurs when the source generated during sample measurement in scanning electron microscope (SEM) analysis is deposited onto the sample surface. As the sources of carbon-related contamination generated by accelerated electrons degrade the precision of sample analysis, many researchers have attempted to minimize contamination [8]. This phenomenon has been incorporated into the electron beam-induced deposition process and further utilized as a fine compound deposition technology [9]

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