Abstract
Abstract Lattice disorder induced by ion bombardment of SiC surfaces has been studied using Raman spectroscopy. After bombardment with 15 keV H+, D+ or He+ to fluences of 1019 cm−2 the SiC surface was found to amorphize as indicated by changes in the Raman spectra. Raman studies of the annealing behavior of the damaged surface showed that no recrystallization of the amorphous layer occurred after 12 hours at 1000°C. By using different wavelengths of the exciting radiation the spatial distribution of the ion induced damage was investigated. Evidence for the preferential sputtering of Si resulting in a carbon rich surface layer is discussed. Based on work performed under the auspices of the US Energy Research and Development Administration. By acceptance of this article, the publisher and/or recipient acknowledges the US Government's right to retain a nonexclusive, royalty-free license in and to any copyright covering this paper.
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