Abstract
The Al/Ga interdiffusion after annealing has been characterized by Raman scattering on a GaAsGa 1−xAl xAs superlattice where different densities of damage had been initially induced by implantation of electrically inactive isoelectronic elements, 31P +, in order to eliminate the impurity charge associated effects. To probe the mixing beyond the damaged zone of the superlattice, complementary Auger and SIMS experiments have implantation induced defects proceeds from the examination of the whole set of results.
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