Abstract
Cd 0.96Zn 0.04Te thin films were prepared by vacuum evaporation onto glass substrates kept at room temperature. X-ray diffraction (XRD) studies revealed that the as-deposited films have zinc blende structure with preferential (1 1 1) orientation. Raman peak of the as-deposited film appeared between 139.88 and 163.40 cm −1 for the transverse optic and the longitudinal optic phonons, respectively. These films were implanted with 100 keV boron ions to various doses from 10 12 to 10 14 ions/cm 2. The XRD patterns of the irradiated films exhibited a decrease in peak intensity and increase in the FWHM of the (1 1 1) peak. The Raman peak position did not change appreciably whereas the FWHM increases with the ion dose and the results are attributed to the effect of implantation-induced lattice damage.
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