Abstract
This paper presents the Raman scattering characteristics of poly (polycrystalline) 3C–SiC thin films deposited on AlN buffer layer by atmospheric pressure chemical vapor deposition (APCVD) using hexamethyldisilane (MHDS) and carrier gases (Ar+H2). The Raman spectra of SiC films deposited on AlN layer of before and after annealing were investigated according to the growth temperature of 3C–SiC. Two strong Raman peaks, which mean that poly 3C–SiC admixed with nanoparticle graphite, were measured in them. The biaxial stress of poly 3C–SiC/AlN was calculated as 896MPa from the Raman shifts of 3C–SiC deposited at 1180°C on AlN of after annealing.
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