Abstract
AbstractEstimates are given for the process by which the s – d exchange interaction may contribute to the Raman scattering due to the magnon–spin flip of the conduction electron processes in antiferromagnetic semiconductors. It is shown that for the typical values of the s – d exchange interaction integral, i.e. 0.01–0.1 eV, the extinction coefficient can be larger by two orders of magnitude than that in ferromagnetic semiconductors. The value of the extinction coefficient in antiferromagnetic semiconductors is found to be 10−9–10−11 cm−1 sr−1. It is also shown that the change of the value of an absorbed energy in an external magnetic field allows us to determine the gyromagnetic factor for the conduction electrons.
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