Abstract
We have carried out the Raman-scattering measurement of (GaAs)n(GaP)n short-period superlattices (n=1–5) prepared by the atomic layer epitaxy technique called pulsed jet epitaxy (PJE). The zone-folding effects on the longitudinal-acoustic (LA) phonon were observed for all the samples. The Raman peak observed for the (GaAs)1(GaP)1 monolayer superlattice has also been tentatively assigned to the scattering from zone-folded LA phonons. If the assignment is correct, this is the first observation of the zone-folded LA phonon in a semiconductor monolayer superlattice. The present results suggest that the growth proceeds atomic layer by atomic layer in PJE.
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