Abstract
By using the matrix diagonalization method within the effective-mass approximation, we have investigated the Raman scattering process associated with an exciton confined by a quantum dot. With typical semiconducting GaAs-based materials, the differential cross-section has been examined based on the computed energies and wave functions. The results show that the Raman scattering of an exciton in quantum dots is strongly affected by the Coulomb interaction, the hole mass and the dot radius. Contrary to the case of uncorrelated electron–hole pairs, excitons occur stronger Raman scattering in quantum dots.
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