Abstract
To clarify the structure of amorphous silicon (a-Si), with the thickness less than 5nm, affected by the interface between a-Si and a-SiO 2 as well as the structural changes after an annealing of 900°C in N 2 gas atmosphere, Raman scattering investigation is carried out in a-Si/SiO 2 superlattice (SL) films prepared by the sputtering method. Vibrational motion of strained a-Si at and near a-Si/SiO 2 interface is influenced by the vibration of pressed a-SiO 2 at the other side of the interface that results a blue shift of transverse optic (TO) -like modes in a-Si. The narrow space of thin (<2.5 nm in this work) a-Si layer impedes the crystallization to c-Si and the relaxation of energy during the crystallization event.
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