Abstract
Results concerned with the measurement of internal strain in pseudomorphic InxGa1-xAs/GaAs structures are reported. The Raman phonon wavenumbers of strain-relaxed alloy samples over a wide range of compositionxare presented. Raman scattering experiments were carried out to measure the optical lattice modes of a series of InxGa1-xAs/GaAs strained-layer superlattices grown by molecular beam epitaxy on the (001) surface of GaAs substrates. The quantitative determination of strain in each type of strained layers was determined from the wavenumber shifts between commensurate and incommensurate layers.
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